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Generalized Simple Theory for Estimating Lateral Leakage Loss Behavior in Silicon-on-Insulator Ridge Waveguides

机译:估计绝缘子上硅脊波导中的横向泄漏损耗行为的广义简单理论

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摘要

In this paper, we numerically investigate the lateral leakage loss behavior for TM-like modes in silicon-on-insulator ridge waveguides. If the waveguide width is set to satisfy a certain condition, the leakage loss of the TM-like mode leads to be a minimum. When utilizing TM-like modes in the ridge waveguides, it is the main drawback that the tolerance for the variations in the waveguide width and operation wavelength is too small. In this paper, we propose a novel ridge waveguide structure, where a dimple is introduced at the ridge region. It is shown from the finite-element analysis that the ridge waveguide with a dimple is both low loss and fabrication tolerant.
机译:在本文中,我们数值研究了绝缘体上硅脊形波导中TM模的横向泄漏损耗行为。如果将波导宽度设定为满足一定条件,则TM状模式的泄漏损失最小。当在脊形波导中使用类似TM的模式时,主要缺点是波导宽度和工作波长变化的公差太小。在本文中,我们提出了一种新颖的脊形波导结构,其中在脊形区域引入了一个凹坑。从有限元分析中可以看出,带有凹坑的脊形波导既损耗低,又可以制造。

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